BFR96, BFR96S
N-P-N bipolar silicon RF transistors
 
Transistors are designed for application in satellite communication systems, small signal amplifiers, wideband, low noise, front end, high speed switches, HF oscillators. 
Plastic package SOT-37.
Pinouts: 
1- Base, 2- Collector, 3-Emitter		  
Ratings
 
Symbol
Parameter, unit, test conditions
Limits 
VCB0
 Collector- base voltage, V
20
VCE0
 Collector- emitter voltage, V
15
VEB0
 Emitter- base voltage, V
3
IC
Collector current, mA, BFR96 

BFR96S
75
100
Ptot
 Power dissipation, mW 

TA= -45 to +25°C 

TA= +70°C 
700
375
 
Characteristics (TA = 25°C)
 
Symbol
Parameter, unit, test conditions
Limits
   
min
max
fT
Transition frequency,GHz, 

IE=50mA, VCB=10V
3.2
  
hFE
DC current gain,
IE=50mA, VCB=10V BFR96 IE=70mA, VCB=10V BFR96S
75
75
  
ICBO
 Collector cut-off current, nA, 

VCB=10V

  
100
IEBO
 Emitter cut-off current, µA, 

VEB= 3V

  
100
GP
DC current gain, dB,
IE=50mA, VCB=10V, f=500MHz BFR96 

IE=50mA, VCB=10V, f=800MHz BFR96S
13.5
9.0
  
F
 Noise figure, dB,  

IE=50mA, VCE=10V, f=800MHz

  
3.6
CC
 Collector capacitance, pF, 

VCB=10V, f= 1MHz

  
2.0